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Part Number Overview
Manufacturer Part Number
FQU8P10TU
Description
POWER FIELD-EFFECT TRANSISTOR, 6
Detailed Description
P-Channel 100 V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Through Hole IPAK
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
745
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
530mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 44W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
ONSFSCFQU8P10TU
2156-FQU8P10TU
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQU8P10TU
Documents & Media
Datasheets
1(FQU8P10TU Datasheet)
Quantity Price
Quantity: 745
Unit Price: $0.4
Packaging: Bulk
MinMultiplier: 745
Packaging: Bulk
MinMultiplier: 745
Substitutes
-