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Part Number Overview
Manufacturer Part Number
TK7E80W,S1X
Description
MOSFET N-CH 800V 6.5A TO220
Detailed Description
N-Channel 800 V 6.5A (Ta) 110W (Tc) Through Hole TO-220
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
24 Weeks
Edacad Model
TK7E80W,S1X Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
TK7E80
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TK7E80WS1X
TK7E80W,S1X(S
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK7E80W,S1X
Documents & Media
Datasheets
1(TK7E80W)
Featured Product
()
EDA Models
1(TK7E80W,S1X Models)
Quantity Price
Quantity: 5000
Unit Price: $1.27875
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Unit Price: $2.74
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
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