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Part Number Overview
Manufacturer Part Number
FDFMA2P859T
Description
MOSFET P-CH 20V 3A MICROFET
Detailed Description
P-Channel 20 V 3A (Ta) 1.4W (Ta) Surface Mount MicroFET 2x2 Thin
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
1,110
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
120mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
435 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
1.4W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MicroFET 2x2 Thin
Package / Case
6-UDFN Exposed Pad
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2156-FDFMA2P859T-FSTR
FAIFSCFDFMA2P859T
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDFMA2P859T
Documents & Media
Datasheets
1(FDFMA2P859T)
Quantity Price
Quantity: 1110
Unit Price: $0.27
Packaging: Bulk
MinMultiplier: 1110
Packaging: Bulk
MinMultiplier: 1110
Substitutes
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