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Part Number Overview
Manufacturer Part Number
NTY100N10G
Description
MOSFET N-CH 100V 123A TO264
Detailed Description
N-Channel 100 V 123A (Tc) 313W (Tc) Through Hole TO-264
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
25
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
123A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
350 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10110 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
313W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-264
Package / Case
TO-264-3, TO-264AA
Base Product Number
NTY100
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-NTY100N10G-ON
ONSONSNTY100N10G
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTY100N10G
Documents & Media
Datasheets
1(NTY100N10)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 01/Jul/2009)
HTML Datasheet
1(NTY100N10)
Quantity Price
-
Substitutes
-