China
Spain
Rusia
Italy
GermanyIRF6641TRPBF
Part Number Overview
Manufacturer Part Number
IRF6641TRPBF
Description
IRF6641 - 12V-300V N-CHANNEL POW
Detailed Description
N-Channel 200 V 4.6A (Ta), 26A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
Manufacturer
International Rectifier
Standard LeadTime
Edacad Model
Standard Package
150
Supplier Stocks
Technical specifications
Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Ta), 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
59.9mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MZ
Package / Case
DirectFET™ Isometric MZ
Base Product Number
IRF6641
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-IRF6641TRPBF-IR
INFIRFIRF6641TRPBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRF6641TRPBF
Documents & Media
Datasheets
1(IRF6641TRPBF Datasheet)
Quantity Price
Quantity: 150
Unit Price: $2.01
Packaging: Bulk
MinMultiplier: 150
Packaging: Bulk
MinMultiplier: 150
Substitutes
-