China
Spain
Rusia
Italy
GermanyTRS6E65C,S1AQ
Part Number Overview
Manufacturer Part Number
TRS6E65C,S1AQ
Description
DIODE SIL CARB 650V 6A TO220-2L
Detailed Description
Diode 650 V 6A Through Hole TO-220-2L
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Obsolete
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
6A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 6 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
90 µA @ 650 V
Capacitance @ Vr, F
35pF @ 650V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C (Max)
Base Product Number
TRS6E65
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Other Names
TRS6E65C,S1Q
TRS6E65CS1Q-ND
TRS6E65C,S1AQ(S
TRS6E65CS1AQ(S
TRS6E65CS1AQ
TRS6E65CS1Q
TRS6E65C,S1Q(S
Category
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Toshiba Semiconductor and Storage TRS6E65C,S1AQ
Documents & Media
PCN Obsolescence/ EOL
1(Mult Dev EOL 18/Oct/2018)
Quantity Price
-
Substitutes
Part No. : TRS6E65F,S1Q
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 0
Unit Price. : $2.70000
Substitute Type. : Similar
Quantity Available. : 0
Unit Price. : $2.70000
Substitute Type. : Similar
Part No. : NXPSC066506Q
Manufacturer. : WeEn Semiconductors
Quantity Available. : 3,000
Unit Price. : $3.53000
Substitute Type. : Parametric Equivalent
Quantity Available. : 3,000
Unit Price. : $3.53000
Substitute Type. : Parametric Equivalent