China
Spain
Rusia
Italy
GermanyIPB80P03P405ATMA1
Part Number Overview
Manufacturer Part Number
IPB80P03P405ATMA1
Description
MOSFET P-CH 30V 80A TO263-3
Detailed Description
P-Channel 30 V 80A (Tc) 137W (Tc) Surface Mount PG-TO263-3-2
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 253µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
137W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB80P
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IPB80P03P405ATMA1TR
IPB80P03P4-05
IPB80P03P405ATMA1TR
SP000396282
IPB80P03P405ATMA1TR-ND
IPB80P03P4-05-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB80P03P405ATMA1
Documents & Media
Datasheets
1(IPx80P03P4-05)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx80P03P4-05)
Simulation Models
1(OptiMOS-P2-Spice Model)
Quantity Price
-
Substitutes
-