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Part Number Overview
Manufacturer Part Number
10ETF12S
Description
DIODE GEN PURP 1.2KV 10A TO263AB
Detailed Description
Diode 1200 V 10A Surface Mount TO-263AB (D2PAK)
Manufacturer
Vishay General Semiconductor - Diodes Division
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Vishay General Semiconductor - Diodes Division
Series
-
Package
Tube
Product Status
Obsolete
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
10A
Voltage - Forward (Vf) (Max) @ If
1.33 V @ 10 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
310 ns
Current - Reverse Leakage @ Vr
100 µA @ 1200 V
Capacitance @ Vr, F
-
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AB (D2PAK)
Operating Temperature - Junction
-40°C ~ 150°C
Base Product Number
10ETF12
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Other Names
VS-10ETF12S
VS-10ETF12S-ND
VS10ETF12S
*10ETF12S
VS10ETF12S-ND
Category
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Vishay General Semiconductor - Diodes Division 10ETF12S
Documents & Media
Datasheets
1(10ETFzzS Series)
HTML Datasheet
1(10ETFzzS Series)
Product Drawings
()
Quantity Price
-
Substitutes
Part No. : VS-10ETF12STRL-M3
Manufacturer. : Vishay General Semiconductor - Diodes Division
Quantity Available. : 7,900
Unit Price. : $1.77000
Substitute Type. : Parametric Equivalent
Quantity Available. : 7,900
Unit Price. : $1.77000
Substitute Type. : Parametric Equivalent
Part No. : VS-10ETF12STRR-M3
Manufacturer. : Vishay General Semiconductor - Diodes Division
Quantity Available. : 0
Unit Price. : $0.77051
Substitute Type. : Parametric Equivalent
Quantity Available. : 0
Unit Price. : $0.77051
Substitute Type. : Parametric Equivalent