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Part Number Overview
Manufacturer Part Number
FDN363N
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 100 V 1A (Tc) 500mW (Tc) Surface Mount SuperSOT™-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
1,664
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
240mOhm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
500mW (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SuperSOT™-3
Package / Case
TO-236-3, SC-59, SOT-23-3
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
2156-FDN363N
FAIFSCFDN363N
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDN363N
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 1664
Unit Price: $0.18
Packaging: Bulk
MinMultiplier: 1664
Packaging: Bulk
MinMultiplier: 1664
Substitutes
-