China
Spain
Rusia
Italy
GermanyBUZ111S
Part Number Overview
Manufacturer Part Number
BUZ111S
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
352
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs
185 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IFEINFBUZ111S
2156-BUZ111S
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BUZ111S
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 352
Unit Price: $0.85
Packaging: Bulk
MinMultiplier: 352
Packaging: Bulk
MinMultiplier: 352
Substitutes
-