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Part Number Overview
Manufacturer Part Number
FQI4N80TU
Description
MOSFET N-CH 800V 3.9A I2PAK
Detailed Description
N-Channel 800 V 3.9A (Tc) 3.13W (Ta), 130W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
286
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 130W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
FAIFSCFQI4N80TU
2156-FQI4N80TU
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQI4N80TU
Documents & Media
Datasheets
1(FQI4N80TU Datasheet)
Quantity Price
Quantity: 286
Unit Price: $1.05
Packaging: Bulk
MinMultiplier: 286
Packaging: Bulk
MinMultiplier: 286
Substitutes
-