Last updates
20260408
Language
English
China
Spain
Rusia
Italy
Germany
Electronic News
Stock Inquiry Online
NDD02N60Z-1G
Part Number Overview
Manufacturer Part Number
NDD02N60Z-1G
Description
MOSFET N-CH 600V 2.2A IPAK
Detailed Description
N-Channel 600 V 2.2A (Tc) 57W (Tc) Through Hole I-PAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
75
Supplier Stocks
>>>Click to Check<<<
Want to know more about NDD02N60Z-1G ?
Innovo Technology will serve you professionally
Technical specifications
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
10.1 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
274 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
57W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
NDD02
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
NDD02N60Z-1G-ND
NDD02N60Z1G
ONSONSNDD02N60Z-1G
NDD02N60Z-1GOS
2156-NDD02N60Z-1G-ON
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NDD02N60Z-1G
Documents & Media
Datasheets
1(NDx02N60Z)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 01/Sep/2017)
PCN Assembly/Origin
1(Mult Devices 29/Aug/2017)
HTML Datasheet
1(NDx02N60Z)
Quantity Price
-
Substitutes
Part No. : STD2HNK60Z-1
Manufacturer. : STMicroelectronics
Quantity Available. : 3,054
Unit Price. : $1,953.00000
Substitute Type. : Similar
Similar Products
BR93L46FJ-WE2
802-10-006-10-007000
EMM10DRMI
LMK04000BISQ/NOPB
345-034-524-112