China
Spain
Rusia
Italy
GermanyFQP6N60C
Part Number Overview
Manufacturer Part Number
FQP6N60C
Description
POWER FIELD-EFFECT TRANSISTOR, 5
Detailed Description
N-Channel 600 V 5.5A (Tc) 125W (Tc) Through Hole TO-220-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
353
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 2.75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
810 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FQP6N60C
FAIFSCFQP6N60C
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQP6N60C
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 353
Unit Price: $0.85
Packaging: Bulk
MinMultiplier: 353
Packaging: Bulk
MinMultiplier: 353
Substitutes
-