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Part Number Overview
Manufacturer Part Number
APT5SM170B
Description
SICFET N-CH 1700V 5A TO247-3
Detailed Description
N-Channel 1700 V 5A (Tc) 65W (Tc) Through Hole TO-247-3
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
1.25Ohm @ 2.5A, 20V
Vgs(th) (Max) @ Id
3.2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
249 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
65W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
APT5SM170B-ND
150-APT5SM170B
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APT5SM170B
Documents & Media
Datasheets
1(APT5SM170B)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 16/Oct/2017)
HTML Datasheet
1(APT5SM170B)
Quantity Price
-
Substitutes
-