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FQI1P50TU
Part Number Overview
Manufacturer Part Number
FQI1P50TU
Description
MOSFET P-CH 500V 1.5A I2PAK
Detailed Description
P-Channel 500 V 1.5A (Tc) 3.13W (Ta), 63W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
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Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10.5Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.13W (Ta), 63W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FQI1
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQI1P50TU
Documents & Media
Environmental Information
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Quantity Price
-
Substitutes
Part No. : IRF9Z14LPBF
Manufacturer. : Vishay Siliconix
Quantity Available. : 0
Unit Price. : $0.80457
Substitute Type. : Similar
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