China
Spain
Rusia
Italy
GermanySI7792DP-T1-GE3
Part Number Overview
Manufacturer Part Number
SI7792DP-T1-GE3
Description
MOSFET N-CH 30V 40.6A/60A PPAK
Detailed Description
N-Channel 30 V 40.6A (Ta), 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
SkyFET®, TrenchFET® Gen III
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
40.6A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
135 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4735 pF @ 15 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
6.25W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SI7792
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI7792DP-T1-GE3
Documents & Media
Datasheets
1(SI7792DP)
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(SI7792DP)
Quantity Price
-
Substitutes
Part No. : SIRC10DP-T1-GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 5,967
Unit Price. : $0.84000
Substitute Type. : Similar
Quantity Available. : 5,967
Unit Price. : $0.84000
Substitute Type. : Similar