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Part Number Overview
Manufacturer Part Number
ISZ0901NLSATMA1
Description
25V, N-CH MOSFET, LOGIC LEVEL, P
Detailed Description
N-Channel 25 V 40A (Tc) 26W (Tc) Surface Mount PG-TDSON-8-25
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
5,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
9.1 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
670 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
26W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-25
Package / Case
8-PowerTDFN
Base Product Number
ISZ0901
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP005404846
448-ISZ0901NLSATMA1TR
448-ISZ0901NLSATMA1CT
448-ISZ0901NLSATMA1DKR
2156-ISZ0901NLSATMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies ISZ0901NLSATMA1
Documents & Media
Datasheets
1(ISZ0901NLS)
Environmental Information
1(RoHS Certificate)
Quantity Price
-
Substitutes
-