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JAN2N3251A
Part Number Overview
Manufacturer Part Number
JAN2N3251A
Description
TRANS PNP 60V 0.2A TO39
Detailed Description
Bipolar (BJT) Transistor PNP 60 V 200 mA 360 mW Through Hole TO-39 (TO-205AD)
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
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Technical specifications
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V
Power - Max
360 mW
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/323
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39 (TO-205AD)
Base Product Number
2N3251
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
150-JAN2N3251A
1086-16091-MIL
1086-16091
1086-16091-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microsemi Corporation JAN2N3251A
Documents & Media
Datasheets
1(2N3250A(UB),2N3251A(UB))
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 5/Feb/2017)
HTML Datasheet
1(2N3250A(UB),2N3251A(UB))
Quantity Price
-
Substitutes
-
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