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Part Number Overview
Manufacturer Part Number
TK10A60W,S4X
Description
MOSFET N-CH 600V 9.7A TO220
Detailed Description
N-Channel 600 V 9.7A (Ta) 30W (Tc) Through Hole TO-220SIS
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
17 Weeks
Edacad Model
TK10A60W,S4X Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
720 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Mounting Type
Through Hole
Supplier Device Package
TO-220SIS
Package / Case
TO-220-3 Full Pack
Base Product Number
TK10A60
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK10A60W,S4X
Documents & Media
Datasheets
1(TK10A60W)
Featured Product
1(Server Solutions)
EDA Models
1(TK10A60W,S4X Models)
Quantity Price
Quantity: 2500
Unit Price: $1.52439
Packaging: Tube
MinMultiplier: 2500
Packaging: Tube
MinMultiplier: 2500
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