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Part Number Overview
Manufacturer Part Number
2SJ610(TE16L1,NQ)
Description
MOSFET P-CH 250V 2A PW-MOLD
Detailed Description
P-Channel 250 V 2A (Ta) 20W (Ta) Surface Mount PW-MOLD
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.55Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
381 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
20W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PW-MOLD
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
2SJ610
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage 2SJ610(TE16L1,NQ)
Documents & Media
Datasheets
()
PCN Obsolescence/ EOL
1(EOL 08/Nov/2013)
HTML Datasheet
()
Quantity Price
-
Substitutes
-