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Part Number Overview
Manufacturer Part Number
2SC4256
Description
NPN SILICON TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor NPN 1200 V 10 mA 6MHz 1.75 W Through Hole TO-220AB
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
290
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
10 mA
Voltage - Collector Emitter Breakdown (Max)
1200 V
Vce Saturation (Max) @ Ib, Ic
5V @ 200µA, 1mA
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 500µA, 5V
Power - Max
1.75 W
Frequency - Transition
6MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-2SC4256
ONSONS2SC4256
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC4256
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 290
Unit Price: $1.04
Packaging: Bulk
MinMultiplier: 290
Packaging: Bulk
MinMultiplier: 290
Substitutes
-