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Part Number Overview
Manufacturer Part Number
FQD4N20TM
Description
POWER FIELD-EFFECT TRANSISTOR, 3
Detailed Description
N-Channel 200 V 3A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
1,086
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.5 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
220 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 30W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FQD4N20TM
ONSONSFQD4N20TM
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQD4N20TM
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 1086
Unit Price: $0.28
Packaging: Bulk
MinMultiplier: 1086
Packaging: Bulk
MinMultiplier: 1086
Substitutes
-