China
Spain
Rusia
Italy
GermanyIXFQ30N60X
Part Number Overview
Manufacturer Part Number
IXFQ30N60X
Description
MOSFET N-CH 600V 30A TO3P
Detailed Description
N-Channel 600 V 30A (Tc) 500W (Tc) Through Hole TO-3P
Manufacturer
IXYS
Standard LeadTime
Edacad Model
IXFQ30N60X Models
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
HiPerFET™, Ultra X
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
155mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2270 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
500W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
IXFQ30
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFQ30N60X
Documents & Media
Datasheets
1(IXF(T,Q,H)30N60X)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult DEV EOL/OBS 08/Nov/2023)
PCN Design/Specification
1(Multiple Devices Material 23/Jun/2020)
EDA Models
1(IXFQ30N60X Models)
Quantity Price
-
Substitutes
-