China
Spain
Rusia
Italy
GermanyJAN1N6777
Part Number Overview
Manufacturer Part Number
JAN1N6777
Description
DIODE GEN PURP 200V 15A TO257
Detailed Description
Diode 200 V 15A Through Hole TO-257
Manufacturer
Microchip Technology
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Technology
Standard
Voltage - DC Reverse (Vr) (Max)
200 V
Current - Average Rectified (Io)
15A
Voltage - Forward (Vf) (Max) @ If
1.15 V @ 15 A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35 ns
Current - Reverse Leakage @ Vr
10 µA @ 800 mV
Capacitance @ Vr, F
300pF @ 5V, 1MHz
Grade
Military
Qualification
MIL-PRF-19500/646
Mounting Type
Through Hole
Package / Case
TO-257-3
Supplier Device Package
TO-257
Operating Temperature - Junction
-65°C ~ 150°C
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Microchip Technology JAN1N6777
Documents & Media
Environmental Information
()
PCN Assembly/Origin
1(Mult Dev Assembly Site 31/Jan/2024)
Quantity Price
-
Substitutes
-