China
Spain
Rusia
Italy
GermanyFDPF55N06
Part Number Overview
Manufacturer Part Number
FDPF55N06
Description
POWER FIELD-EFFECT TRANSISTOR, 5
Detailed Description
N-Channel 60 V 55A (Tc) 48W (Tc) Through Hole TO-220F-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
344
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
UniFET™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
22mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1510 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
48W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FDPF55N06
FAIFSCFDPF55N06
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDPF55N06
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 344
Unit Price: $0.87
Packaging: Bulk
MinMultiplier: 344
Packaging: Bulk
MinMultiplier: 344
Substitutes
-