China
Spain
Rusia
Italy
GermanyMB85R4M2TFN-G-ASE1
Part Number Overview
Manufacturer Part Number
MB85R4M2TFN-G-ASE1
Description
IC FRAM 4MBIT PARALLEL 44TSOP
Detailed Description
FRAM (Ferroelectric RAM) Memory IC 4Mbit Parallel 150 ns 44-TSOP
Manufacturer
Fujitsu Semiconductor Memory Solution
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
Fujitsu Semiconductor Memory Solution
Series
-
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Non-Volatile
Memory Format
FRAM
Technology
FRAM (Ferroelectric RAM)
Memory Size
4Mbit
Memory Organization
256K x 16
Memory Interface
Parallel
Write Cycle Time - Word, Page
150ns
Access Time
150 ns
Voltage - Supply
1.8V ~ 3.6V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
44-TSOP (0.400", 10.16mm Width)
Supplier Device Package
44-TSOP
Base Product Number
MB85R4
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8542.32.0071
Other Names
865-1266-6INACTIVE
865-1266-6-ND
865-1266
865-1266-6INACTIVATE-ND
865-1266-1
865-1266-6INACTIVATED-ND
865-1266-1-ND
B85R4M2TFN-G-ASE1
865-1266-6
Category
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Fujitsu Semiconductor Memory Solution MB85R4M2TFN-G-ASE1
Documents & Media
Video File
1(Kaga FEI America Introduction of FRAM Usage)
PCN Obsolescence/ EOL
1(MB85Ryy EOL 15/Feb/2019)
PCN Packaging
1(Interior Box 14/Apr/2023)
HTML Datasheet
1(FRAM Overview)
Quantity Price
-
Substitutes
-