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Part Number Overview
Manufacturer Part Number
FCP165N65S3
Description
MOSFET N-CH 650V 19A TO220-3
Detailed Description
N-Channel 650 V 19A (Tc) 154W (Tc) Through Hole TO-220-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FCP165N65S3 Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
SuperFET® III
Package
Tube
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
154W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FCP165
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FCP165N65S3OS
FCP165N65S3-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FCP165N65S3
Documents & Media
Datasheets
1(FCP165N65S3)
Environmental Information
()
PCN Design/Specification
1(SuperFet Datasheet Chg 30/Jul/2019)
PCN Assembly/Origin
1(Mult Dev 23/Oct/2023)
HTML Datasheet
1(FCP165N65S3)
EDA Models
1(FCP165N65S3 Models)
Quantity Price
-
Substitutes
Part No. : FCH165N65S3R0-F155
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