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Part Number Overview
Manufacturer Part Number
IPD10N03LA
Description
MOSFET N-CH 25V 30A TO252-3
Detailed Description
N-Channel 25 V 30A (Tc) 52W (Tc) Surface Mount PG-TO252-3-11
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1358 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
52W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3-11
Base Product Number
IPD10N
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP000014983
IPD10N03LAT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD10N03LA
Documents & Media
Datasheets
1(IPx10N03LA G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPx10N03LA G)
Quantity Price
-
Substitutes
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