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Part Number Overview
Manufacturer Part Number
2SD1230
Description
POWER BIPOLAR TRANSISTOR NPN
Detailed Description
Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 20MHz 2.5 W Through Hole TO-3PB
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
323
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 8mA, 4A
Current - Collector Cutoff (Max)
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
1500 @ 4A, 3V
Power - Max
2.5 W
Frequency - Transition
20MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3PB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-2SD1230
ONSONS2SD1230
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD1230
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 323
Unit Price: $1.01
Packaging: Bulk
MinMultiplier: 323
Packaging: Bulk
MinMultiplier: 323
Substitutes
-