China
Spain
Rusia
Italy
GermanyIRF647
Part Number Overview
Manufacturer Part Number
IRF647
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 275 V 13A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
290
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
275 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
340mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
HARHARIRF647
2156-IRF647
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRF647
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 290
Unit Price: $1.04
Packaging: Bulk
MinMultiplier: 290
Packaging: Bulk
MinMultiplier: 290
Substitutes
-