China
Spain
Rusia
Italy
GermanyFQAF12P20
Part Number Overview
Manufacturer Part Number
FQAF12P20
Description
MOSFET P-CH 200V 8.6A TO3PF
Detailed Description
P-Channel 200 V 8.6A (Tc) 70W (Tc) Through Hole TO-3PF
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQAF12P20 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
470mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
70W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Base Product Number
FQAF1
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQAF12P20
Documents & Media
Datasheets
1(FQAF12P20)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(FQAF12P20)
EDA Models
1(FQAF12P20 Models)
Quantity Price
-
Substitutes
-