China
Spain
Rusia
Italy
GermanyFQU2N90TU
Part Number Overview
Manufacturer Part Number
FQU2N90TU
Description
MOSFET N-CH 900V 1.7A IPAK
Detailed Description
N-Channel 900 V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Through Hole IPAK
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
579
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.2Ohm @ 850mA, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCFQU2N90TU
2156-FQU2N90TU-FS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQU2N90TU
Documents & Media
Datasheets
1(FQU2N90TU)
Quantity Price
Quantity: 579
Unit Price: $0.52
Packaging: Tube
MinMultiplier: 579
Packaging: Tube
MinMultiplier: 579
Substitutes
-