China
Spain
Rusia
Italy
GermanyHUF75545S3
Part Number Overview
Manufacturer Part Number
HUF75545S3
Description
MOSFET N-CH 80V 75A I2PAK
Detailed Description
N-Channel 80 V 75A (Tc) 270W (Tc) Through Hole TO-262 (I2PAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
235 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3750 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
270W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
HUF75
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi HUF75545S3
Documents & Media
Datasheets
1(HUF75545S3ST Datasheet)
Environmental Information
()
Quantity Price
-
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