China
Spain
Rusia
Italy
Germany2SC2735JTL-E
Part Number Overview
Manufacturer Part Number
2SC2735JTL-E
Description
SMALL SIGNAL BIPOLAR TRANSTR NPN
Detailed Description
RF Transistor NPN 20V 50mA 1.2GHz 150mW Surface Mount 3-MPAK
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
2,704
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
20V
Frequency - Transition
1.2GHz
Noise Figure (dB Typ @ f)
6.5dB @ 200MHz
Gain
21dB
Power - Max
150mW
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA, 10V
Current - Collector (Ic) (Max)
50mA
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-MPAK
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-2SC2735JTL-E
RENRNS2SC2735JTL-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Renesas Electronics Corporation 2SC2735JTL-E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 2704
Unit Price: $0.11
Packaging: Bulk
MinMultiplier: 2704
Packaging: Bulk
MinMultiplier: 2704
Substitutes
-