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Part Number Overview
Manufacturer Part Number
IPI072N10N3G
Description
OPTLMOS N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 100 V 80A (Tc) 150W (Tc) Through Hole PG-TO262-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
289
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS® 3
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
7.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4910 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
IFEINFIPI072N10N3G
2156-IPI072N10N3G
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI072N10N3G
Documents & Media
Datasheets
1(IPI072N10N3G Datasheet)
Quantity Price
Quantity: 289
Unit Price: $1.04
Packaging: Bulk
MinMultiplier: 289
Packaging: Bulk
MinMultiplier: 289
Substitutes
-