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Part Number Overview
Manufacturer Part Number
IPS031N03LGAKMA1
Description
LV POWER MOS
Detailed Description
N-Channel 30 V 90A (Tc) 94W (Tc) Through Hole PG-TO251-3-11
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™ 3
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5300 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-11
Package / Case
TO-251-3 Stub Leads, IPAK
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFIPS031N03LGAKMA1
2156-IPS031N03LGAKMA1-IT
SP000788214
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPS031N03LGAKMA1
Documents & Media
Datasheets
1(IPD031N03L G, IPS031N03L G)
Other Related Documents
1(Part Number Guide)
HTML Datasheet
1(IPD031N03L G, IPS031N03L G)
Quantity Price
-
Substitutes
-