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Part Number Overview
Manufacturer Part Number
2N5598
Description
LOW FREQUENCY SILICON POWER NPN
Detailed Description
Bipolar (BJT) Transistor PNP 60 V 2 A 20 W Through Hole TO-66 (TO-213AA)
Manufacturer
General Semiconductor
Standard LeadTime
Edacad Model
Standard Package
8
Supplier Stocks
Technical specifications
Mfr
General Semiconductor
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
850mV @ 200µA, 1mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
20 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2
Supplier Device Package
TO-66 (TO-213AA)
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-2N5598
GSIGSI2N5598
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/General Semiconductor 2N5598
Documents & Media
Datasheets
1(2N5598 Datasheet)
Quantity Price
Quantity: 8
Unit Price: $41.44
Packaging: Bulk
MinMultiplier: 8
Packaging: Bulk
MinMultiplier: 8
Substitutes
-