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IPB80N04S3H4ATMA1
Part Number Overview
Manufacturer Part Number
IPB80N04S3H4ATMA1
Description
MOSFET N-CH 40V 80A TO263-3
Detailed Description
N-Channel 40 V 80A (Tc) 115W (Tc) Surface Mount PG-TO263-3-2
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
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Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 65µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB80N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPB80N04S3-H4
2156-IPB80N04S3H4ATMA1-ITTR
IPB80N04S3H4ATMA1TR
SP000415564
INFINFIPB80N04S3H4ATMA1
IPB80N04S3-H4-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPB80N04S3H4ATMA1
Documents & Media
Datasheets
1(IPx80N04S3-H4)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
HTML Datasheet
1(IPx80N04S3-H4)
Quantity Price
-
Substitutes
Part No. : IPB80N04S404ATMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 2,000
Unit Price. : $1.10193
Substitute Type. : Direct
Part No. : STB120N4F6
Manufacturer. : STMicroelectronics
Quantity Available. : 944
Unit Price. : $2.38000
Substitute Type. : Similar
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