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Part Number Overview
Manufacturer Part Number
IRFB38N20DPBF
Description
IRFB38N20 - 12V-300V N-CHANNEL P
Detailed Description
N-Channel 200 V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB
Manufacturer
International Rectifier
Standard LeadTime
Edacad Model
Standard Package
226
Supplier Stocks
Technical specifications
Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
54mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
91 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IRFB38N20DPBF
INFINFIRFB38N20DPBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRFB38N20DPBF
Documents & Media
Datasheets
1(IRFB38N20DPBF Datasheet)
Quantity Price
Quantity: 226
Unit Price: $1.33
Packaging: Bulk
MinMultiplier: 226
Packaging: Bulk
MinMultiplier: 226
Substitutes
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