China
Spain
Rusia
Italy
GermanyAPTC90DAM60CT1G
Part Number Overview
Manufacturer Part Number
APTC90DAM60CT1G
Description
MOSFET N-CH 900V 59A SP1
Detailed Description
N-Channel 900 V 59A (Tc) 462W (Tc) Chassis Mount SP1
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
100
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
CoolMOS™
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id
3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
540 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13600 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
462W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SP1
Package / Case
SP1
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
APTC90DAM60CT1G-ND
150-APTC90DAM60CT1G
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APTC90DAM60CT1G
Documents & Media
Environmental Information
()
PCN Obsolescence/ EOL
1(STD Dev EOL Jul/2018)
HTML Datasheet
1(APTC90DAM60CT1G)
Quantity Price
-
Substitutes
-