China
Spain
Rusia
Italy
GermanySPB18P06P
Part Number Overview
Manufacturer Part Number
SPB18P06P
Description
MOSFET P-CH 60V 18.7A D2PAK
Detailed Description
P-Channel 60 V 18.7A (Ta) 81.1W (Ta) Surface Mount PG-TO263-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
18.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
860 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
81.1W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SPB18P
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SPB18P06PT
2156-SPB18P06P-ITTR
INFINFSPB18P06P
SP000012329
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPB18P06P
Documents & Media
Datasheets
1(SPB18P06P)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SPB18P06P)
Quantity Price
-
Substitutes
Part No. : SPB18P06PGATMA1
Manufacturer. : Infineon Technologies
Quantity Available. : 2,700
Unit Price. : $1.42000
Substitute Type. : Parametric Equivalent
Quantity Available. : 2,700
Unit Price. : $1.42000
Substitute Type. : Parametric Equivalent