China
Spain
Rusia
Italy
Germany71V25761S200BG8
Part Number Overview
Manufacturer Part Number
71V25761S200BG8
Description
IC SRAM 4.5MBIT PAR 119PBGA
Detailed Description
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 200 MHz 3.1 ns 119-PBGA (14x22)
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Active
allaboutcomponents.com Programmable
Not Verified
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Synchronous, SDR
Memory Size
4.5Mbit
Memory Organization
128K x 36
Memory Interface
Parallel
Clock Frequency
200 MHz
Write Cycle Time - Word, Page
-
Access Time
3.1 ns
Voltage - Supply
3.135V ~ 3.465V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
Surface Mount
Package / Case
119-BGA
Supplier Device Package
119-PBGA (14x22)
Base Product Number
71V25761
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
3A991B2A
HTSUS
8542.32.0041
Other Names
IDT71V25761S200BG8-ND
IDT71V25761S200BG8
Category
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Renesas Electronics Corporation 71V25761S200BG8
Documents & Media
Datasheets
()
PCN Design/Specification
1(PBGA Substrate 21-May-2022)
PCN Packaging
1(All Dev Label Chg 1/Dec/2022)
HTML Datasheet
()
Quantity Price
-
Substitutes
-