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Part Number Overview
Manufacturer Part Number
ISL9N306AP3
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 30 V 75A (Tc) 125W (Ta) Through Hole TO-220AB
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
398
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
UltraFET®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3400 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
125W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCISL9N306AP3
2156-ISL9N306AP3
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor ISL9N306AP3
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 398
Unit Price: $0.75
Packaging: Bulk
MinMultiplier: 398
Packaging: Bulk
MinMultiplier: 398
Substitutes
-