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Part Number Overview
Manufacturer Part Number
IGT60R070D1E8220ATMA1
Description
GAN HV
Detailed Description
N-Channel 600 V 31A (Tc) 125W (Tc) Surface Mount PG-HSOF-8-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolGaN™
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 2.6mA
Vgs (Max)
-10V
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-HSOF-8-3
Package / Case
8-PowerSFN
Environmental & Export Classifications
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IGT60R070D1E8220ATMA1
SP001688772
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IGT60R070D1E8220ATMA1
Documents & Media
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Quantity Price
-
Substitutes
Part No. : IGT60R070D1ATMA4
Manufacturer. : Infineon Technologies
Quantity Available. : 2,958
Unit Price. : $13.07000
Substitute Type. : Similar
Quantity Available. : 2,958
Unit Price. : $13.07000
Substitute Type. : Similar