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Part Number Overview
Manufacturer Part Number
APT9M100B
Description
MOSFET N-CH 1000V 9A TO247
Detailed Description
N-Channel 1000 V 9A (Tc) 335W (Tc) Through Hole TO-247 [B]
Manufacturer
Microchip Technology
Standard LeadTime
43 Weeks
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
POWER MOS 8™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 5A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
80 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2605 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
335W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 [B]
Package / Case
TO-247-3
Base Product Number
APT9M100
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology APT9M100B
Documents & Media
Datasheets
()
Environmental Information
()
PCN Assembly/Origin
1(Fab Site 27/Jul/2022)
HTML Datasheet
()
Quantity Price
Quantity: 110
Unit Price: $3.96255
Packaging: Tube
MinMultiplier: 110
Packaging: Tube
MinMultiplier: 110
Substitutes
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