China
Spain
Rusia
Italy
GermanyFDD850N10LD
Part Number Overview
Manufacturer Part Number
FDD850N10LD
Description
MOSFET N-CH 100V 15.3A TO252-4L
Detailed Description
N-Channel 100 V 15.3A (Tc) 42W (Tc) Surface Mount TO-252 (DPAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
PowerTrench®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
15.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
75mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
28.9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1465 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-5, DPAK (4 Leads + Tab), TO-252AD
Base Product Number
FDD850
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FDD850N10LDTR
FDD850N10LDDKR
FDD850N10LDCT
FDD850N10LD-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDD850N10LD
Documents & Media
Datasheets
1(FDD850N10LD)
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
()
Featured Product
1(ON Semiconductor - 30 V to 60 V Trench6 N-Channel MOSFET)
PCN Obsolescence/ EOL
1(Mult Devices 31/Jan/2019)
PCN Design/Specification
()
PCN Packaging
1(Mult Devices 24/Oct/2017)
Quantity Price
-
Substitutes
Part No. : FDD850N10L
Manufacturer. : onsemi
Quantity Available. : 8,665
Unit Price. : $1.13000
Substitute Type. : Similar
Quantity Available. : 8,665
Unit Price. : $1.13000
Substitute Type. : Similar