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FQU8P10TU
Part Number Overview
Manufacturer Part Number
FQU8P10TU
Description
MOSFET P-CH 100V 6.6A IPAK
Detailed Description
P-Channel 100 V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
70
Supplier Stocks
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Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
530mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
470 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 44W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
FQU8P10
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FQU8P10TU-ND
FQU8P10TUOS
ONSONSFQU8P10TU
2156-FQU8P10TU-OS
2832-FQU8P10TU
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQU8P10TU
Documents & Media
Datasheets
1(FQD8P10, FQU8P10)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 23/Dec/2021)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Assembly Chg 20/Dec/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)
Quantity Price
-
Substitutes
Part No. : IRFU9120PBF
Manufacturer. : Vishay Siliconix
Quantity Available. : 2,707
Unit Price. : $1.70000
Substitute Type. : Similar
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