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Part Number Overview
Manufacturer Part Number
SCTWA90N65G2V
Description
SILICON CARBIDE POWER MOSFET 650
Detailed Description
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads
Manufacturer
STMicroelectronics
Standard LeadTime
52 Weeks
Edacad Model
SCTWA90N65G2V Models
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
119A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
157 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3380 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
565W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 Long Leads
Package / Case
TO-247-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics SCTWA90N65G2V
Documents & Media
Datasheets
1(SCTWA90N65G2V)
EDA Models
1(SCTWA90N65G2V Models)
Quantity Price
Quantity: 120
Unit Price: $28.04717
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $29.917
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $36.09
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Substitutes
Part No. : MSC015SMA070B
Manufacturer. : Microchip Technology
Quantity Available. : 445
Unit Price. : $35.76000
Substitute Type. : Similar
Quantity Available. : 445
Unit Price. : $35.76000
Substitute Type. : Similar