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Part Number Overview
Manufacturer Part Number
IPI028N08N3GHKSA1
Description
MOSFET N-CH 80V 100A TO262-3
Detailed Description
N-Channel 80 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
206 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14200 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI028N
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPI028N08N3 G
SP000395160
IPI028N08N3 G-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI028N08N3GHKSA1
Documents & Media
Datasheets
1(IPP,IPI028N08N3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPP,IPI028N08N3 G)
Quantity Price
-
Substitutes
-