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Part Number Overview
Manufacturer Part Number
IRFD311
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 350 V 400mA (Tc) 1W (Tc) Through Hole 4-DIP, Hexdip
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
300
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
350 V
Current - Continuous Drain (Id) @ 25°C
400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.6Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
135 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-DIP, Hexdip
Package / Case
4-DIP (0.300", 7.62mm)
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-IRFD311
HARHARIRFD311
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRFD311
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 300
Unit Price: $1
Packaging: Bulk
MinMultiplier: 300
Packaging: Bulk
MinMultiplier: 300
Substitutes
-